Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures

IEEE Nuclear Science Symposium and Medical Imaging Conference

Volumn 1, Issue , 2000, Pages

  Eremin, V ^a   Li, Z ^b   Verbitskaya, E ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; NEUTRON IRRADIATION; OPTIMIZATION; RADIATION HARDENING; SEMICONDUCTING SILICON; TEMPERATURE;

CHARGE COLLECTION EFFICIENCY; ELECTRIC FIELD DISTRIBUTION; FREE CARRIER INJECTION; HOLE INJECTION; NEUTRON FLUENCES; OPERATIONAL BIAS VOLTAGE; SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0034593693     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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