메뉴 건너뛰기




Volumn 452, Issue 3, 2000, Pages 440-453

Polarization of silicon detectors by minimum ionizing particles

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC FIELDS; INFRARED DEVICES; LASER APPLICATIONS; MATHEMATICAL MODELS; POLARIZATION; SEMICONDUCTOR DEVICES; SILICON SENSORS;

EID: 0034300670     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00450-2     Document Type: Article
Times cited : (36)

References (17)
  • 2
    • 0032637932 scopus 로고    scopus 로고
    • Defect Analysis of Silicon Detector Made of Different Materials for Radiation Hardness, BNL 65394, Presented at the Second International Conference on Radiation Effects on Semiconductor Materials, Detectors, & Devices, 4-6 March 1998, Florence, Italy
    • Dezillie B., Eremin V., Li Z., Verbitskaya E. Defect Analysis of Silicon Detector Made of Different Materials for Radiation Hardness, BNL 65394, Presented at the Second International Conference on Radiation Effects on Semiconductor Materials, Detectors, & Devices, 4-6 March 1998, Florence, Italy. Nucl. Instr. and Meth. A. 426:1999;114.
    • (1999) Nucl. Instr. and Meth. A , vol.426 , pp. 114
    • Dezillie, B.1    Eremin, V.2    Li, Z.3    Verbitskaya, E.4
  • 3
    • 0033339150 scopus 로고    scopus 로고
    • Dezillie B.et al. IEEE NSS. 46(3):1999;221.
    • (1999) IEEE NSS , vol.46 , Issue.3 , pp. 221
    • Dezillie, B.1
  • 5
    • 85031591176 scopus 로고    scopus 로고
    • 2nd RD48 Status Report, CERN/LHCC 98-39, 21 Oct.
    • 2nd RD48 Status Report, CERN/LHCC 98-39,LEB Status Report/RD48, 21 Oct. 1998.
    • (1998) LEB Status Report/RD48


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.