Gallium incorporation kinetics during gas source molecular beam epitaxy growth of GaN

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 339-343

  Evans, Keith R ^a   Ting, Lei ^a   Jones, Charles R ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DESORPTION; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTOR GROWTH; THIN FILMS;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031078186     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00241-9     Document Type: Article

References (6)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B10, 1237 (1992).
2. K. R. Evans, C. E. Stutz, D. K. Lorance and R. L. Jones, J. Vac. Sci. Technol. B7, 259 (1989).
3. K. R. Evans, R. Kaspi, J. E. Ehret, M. Skowronski and C. R. Jones, J. Vac. Sci. Technol. B13, 1820 (1995).
4. T. Lei, C. R. Jones and K. R. Evans, 1995 Spring Meeting of the Materials Research Society.
5. Lange's Handbook of Chemistry (Edited by John A. Dean). pp. 9-21. McGraw-Hill (1973).
6. R. C. Powell, N. E. Lee and J. E. Greene, Appl. Phys. Lett. 60, 2505 (1992).