GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 62-64

  Hiramatsu, K ^a   Haino, M ^a   Yamaguchi, M ^a   Miyake, H ^a   Motogaito, A ^a   Sawaki, N ^b   Iyechika, Y ^c   Maeda, T ^c  

^a MIE UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

ELO; GaN; MOVPE; Schottky contact; Tungsten; Tungsten nitride

Indexed keywords

CATALYSIS; INTERFACES (MATERIALS); MASKS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; THERMODYNAMIC STABILITY; TUNGSTEN COMPOUNDS;

SCHOTTKY CONTACTS;

SEMICONDUCTING FILMS;

EID: 0035933022     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00692-9     Document Type: Article

References (6)