High quality LEO growth and characterization of GaN films on Al2O3 and Si substrates

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3725, Issue , 1999, Pages 14-20

  Razeghi, M ^a   Kung, P ^a   Walker, D ^a   Hamilton, M ^a   Diaz, J ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; LATERAL EPITAXIAL OVERGROWTH;

THIN FILMS;

EID: 0032642467     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)