Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1295-1299

  Nishisaka, Mika ^a   Asano, Tanemasa ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Er; Er silicide; Floating body effect; MOSFET; Schottky contact; Self aligned silicide; Silicon on insulator; SOI

Indexed keywords

EID: 0000754750     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1295     Document Type: Article

References (10)

1. SOI Kozo Keisei Gijutsu, ed. S. Furukawa (Sangyo Tosho, Tokyo, 1987) [in Japanese].
2. J. P. Collinge: Silicon-on-Insulator Technology: Materials to VLSI (Kluwer Academic Publishers, 1991).
3. K. Arita, M. Akamatsu and T. Asano: Jpn. J. Appl. Phys. 36 (1997) 1505.
4. K. Arita, M. Akamatsu and T. Asano: Ext. Abstr. 1997 Int. Conf. Solid State Devices and Materials, Hamamatsu, 1997 (Business Center for Academic Society of Japan, Tokyo, 1997) p. 146.
5. T. Saraya, M. Takamiya, T. N. Duyet and T. Hiramoto: Ext. Abstr. 1997 Int. Conf. Solid State Devices and Materials, Hamamatsu, 1997 (Business Center for Academic Society of Japan, Tokyo, 1997) p. 554.
6. M. Matloubian: ECS Proc. 5th Int. Symp. SOI Tech. and Devices. 92-13, 1992 p. 64.
7. A. Nishiyama, O. Arisumi, M. Terauchi, S. Takeno, K. Suzuki, C. Takakuwa and M. Yoshimi: Jpn. J. Appl. Phys. 35 (1996) 954.
8. O. Arisumi, K. Matsuzawa, N. Shigyo, M. Terauchi, A. Nishiyama and M. Yoshimi: Jpn. J. Appl. Phys. 35 (1996) 992.
9. T. Tsuchiya, T. Ohno, S. Tazawa and M. Tomozawa: Ext. Abstr. (43rd Spring Meet., 1996) Japan Society of Applied Physics, 26p-E-10 [in Japanese].
10. K. Bohlin, H. T. Nilsson and P. A. Tove: Solid-State Electron. 28 (1985) 913.