An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 361-363

  Rishton, S A ^a   Ismail, K ^a   Chu, J O ^a   Chan, K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SUBSTRATES; TITANIUM;

GATE RESISTANCE; LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION; SCHOTTKY CONTACTS; SOURCE DRAIN RESISTANCE;

MOSFET DEVICES;

EID: 0031072047     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00195-5     Document Type: Article

References (5)

1. S.A. Rishton, Y.J. Mii, D.P. Kern, Y. Taur, K.Y. Lee, T. Lii, K. Jenkins, D. Quinlan, T. Brown, Jr., D. Danner, F. Sewell, and M. Polcari, J. Vac. Sci. Technol. B 11(6), 2612 (1993).
2. G.A. Sai-Halasz, Proceedings IEEE 83(1), 20 (1995).
3. J.P. Snyder, C.R. Helms, and Y. Nishi, Appl. Phys. Lett. 67 (10), 1420 (1995).
4. K.Y. Lee and W.S. Huang, J. Vac. Sci. Technol. B 11(6), 2807 (1993).
5. W. Chang, B. Davari, M.R. Wordeman, Y. Taur, C. Hsu, and D. Rodriguez, IEEE Trans. Electron Devices 39, 959 (1992).