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Volumn 14, Issue 11, 2002, Pages 4586-4594

Application of electroless nickel-boron films for high-selectivity pattern transfer processes

Author keywords

[No Author keywords available]

Indexed keywords

BORON; METAL; NICKEL; PALLADIUM; SILICON DERIVATIVE;

EID: 0036854687     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0202308     Document Type: Article
Times cited : (22)

References (54)
  • 36
    • 0011707594 scopus 로고    scopus 로고
    • Data sheet for NIPOSIT 468 Ni-B bath (Shipley Co.)
    • Data sheet for NIPOSIT 468 Ni-B bath (Shipley Co.).
  • 37
    • 0011765462 scopus 로고    scopus 로고
    • note
    • Catalyst formulation A (Ni particle diameter ∼ 23 nm) was prepared using 0.05 M [NaOH], 0.4 mM [NACl], 2 h ripening time, and complete neutralization of base to quench colloid growth. Catalyst formulation B (Ni particle diameter ∼ 43 nm) was prepared using 0.20 M [NaOH], 0.4 mM [NaCl], 4 h ripening time, and incomplete neutralization of base at quenching. Several of the catalyst preparations were found inactive immediately following preparation. Catalytic inactivity was accompanied by bulk precipitate formation and/or a failure to bind catalyst (as exhibited by a lack of surface wetting) on the substrate surface.
  • 38
    • 0011737104 scopus 로고    scopus 로고
    • note
    • The CCM process requires complete clearing of the resist in order to expose the ligating sites of the siloxane film. Incomplete clearing can result in lower surface coverages of catalyst and changes in the plating rate. To rule out any discrepancy in the data due to photoresist residue in the channels, a series of metal patterns were prepared both by direct DUV photopatterning of siloxane films (DSP process) as well as by the CCM process. Metal thickness measurements for both sets of samples are in good agreement (within 10%), indicating that any residual photoresist on CCM samples does not significantly alter EL Ni deposition rates.
  • 39
    • 0011766769 scopus 로고    scopus 로고
    • note
    • The composite thickness of the catalyst/EL Ni layers depends on the thickness of the initial catalyst layer, which is different for PD1 and PD2. To determine the catalyst layer thicknesses DSP 5 micron line/space patterns were catalyzed with either PD1 or PD2, reduced to the catalytic Pd(0) species, and imaged by AFM. The height of the catalyst layers was then subtracted from the measured height of the Pd/Ni layer, allowing EL Ni thicknesses to be directly compared. The surface bound Pd(0) particles were found to have no appreciable plasma etch resistance in the absence of a deposited EL Ni layer.
  • 40
    • 0011737964 scopus 로고    scopus 로고
    • The chemistry of plasma etching
    • Pogge, H. B., Ed.; Marcel Dekker, New York
    • Economou, D. J. The chemistry of plasma etching. In Electronic Materials Chemistry; Pogge, H. B., Ed.; Marcel Dekker: New York, 1996; pp 251-322.
    • (1996) Electronic Materials Chemistry , pp. 251-322
    • Economou, D.J.1
  • 41
    • 0000112472 scopus 로고
    • Formation and characterization of transition-metal silicides
    • Einspruch, N. G., Larrabee, G. B., Eds.; Academic Press; New York
    • Nicolet, M.-A.; Lau, S. S. Formation and characterization of transition-metal silicides. In VLSI Electronics: Microstructure Science, Vol. 6; Einspruch, N. G., Larrabee, G. B., Eds.; Academic Press; New York, 1983.
    • (1983) VLSI Electronics: Microstructure Science , vol.6
    • Nicolet, M.-A.1    Lau, S.S.2
  • 46
    • 0011706773 scopus 로고    scopus 로고
    • note
    • The electroless Ni plating bath chosen for this study produces a microcrystalline deposit of 7-nm Ni grains. Initially the EL Ni film is deposited as a coating on individual surface bound colloidal Pd(II) particles, eventually leading to the coalescence of particles and the formation of a continuous film. During the course of our work, AFM and visual examinations of the Ni particulate morphology have indicated no preferred grain orientation for the deposited EL Ni films. Therefore, the grain structure of the EL Ni film is not expected to significantly impact etch selectivity.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.