Reactive ion etch of 150 nm Al lines for interconnections in dynamic random access memory

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1425-1430

  Stojakovic, G ^a,b   Ning, X J ^a,b  

^a INFINEON TECHNOLOGIES   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANTIREFLECTION COATINGS; DYNAMIC RANDOM ACCESS STORAGE; MASKS; PHOTORESISTORS; SEMICONDUCTING SILICON COMPOUNDS;

SILICON OXYNITRIDE;

REACTIVE ION ETCHING;

EID: 0034227826     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582365     Document Type: Article

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