Additive channel-constrained metallization of high-resolution features

Thin Solid Films

Volumn 379, Issue 1-2, 2000, Pages 203-212

  Chen, Mu San ^a   Brandow, Susan L ^a   Dressick, Walter J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLESS PLATING; INTERFACES (MATERIALS); METALLIZING; MONOLAYERS; PHOTORESISTS; SEMICONDUCTING SILICON; ULTRAVIOLET RADIATION;

CHANNEL-CONSTRAINED METHOD; CHEMICALLY-AMPLIFIED NEGATIVE TONE PHOTORESISTS;

SEMICONDUCTING FILMS;

EID: 0034513840     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01567-4     Document Type: Article

References (38)

1. Hajdu J. Trans. Inst. Met. Finish. 1:(75):1997;B7.
2. Sato Y., Yoshida M., Nishiyama T., Kobayakawa K. Trans. Inst. Met. Finish. 1:(75):1997;4.
3. Yoshiki H., Kitahara H., Hashimoto K., Fujishima A. J. Electrochem. Soc. 142:1995;L235.
4. Ohta H., Hotta S. NEC Res. Dev. 38:1997;334.
5. Pierce D.W., Realff M.J. Comput. Chem. Eng. B. 20:1996;S1307.
6. Shinagawa S., Kumagai Y., Urabe K. J. Porous Mater. 6:1999;185.
7. Huang C.Y., Pai J.F. Eur. Polym. J. 34:1998;261.
8. Cho J.S.H., Kang H.K., Wong S.S., Shacham-Diamond Y. MRS Bull. 18:1993;31.
9. Pai P.L., Ting C.H. IEEE Electron Dev. Lett. 10:1989;423.
10. Ting C.H., Paunovic M., Pai P.L., Chiu G. J. Electrochem. Soc. 136:1989;462.
11. Schnabel R.F., Clevenger L.A., Costrini G., Dobuzinsky D.M., Filippi R., Gambino J., Lee G.Y., Iggulden R.C., Lin C., Lu Z.G., Ning X.J., Ramachandran R., Ronay M., Tobben D., Weber S.J. Microelectron. Eng. 50:2000;265.
12. O'Kelley J.P., Mongey K.F., Gobil Y., Torres J., Kelly P.V., Crean G.M. Microelectron. Eng. 50:2000;473.
13. Shacham-Diamond Y., Lopatin S. Electrochim. Acta. 44:1999;3639.
14. Calvert J.M., Dressick W.J., Dulcey C.S., Chen M.-S., Georger J.H. Jr., Stenger D.A., Koloski T.S., Calabrese G.S. Thompson L.F., Wilson C.G., Tagawa S. Polymers for Microelectronics: Resists and Dielectrics, A.C.S. Symp. Ser. 537. 1994;210 American Chemical Society, Washington, DC.
15. Dressick W.J., Dulcey C.S., Calvert J.M., Georger J.H. Jr., Calabrese G.S., Thomas M.E., Stever H.A. Katz A., Murarka S.P., Nissim Y.I., Harper J.M.E. Advanced Metallization and Processing for Semiconductor Devices and Circuits-II, Mat. Res. Soc. Symp. Proc. 260. 1992;659.
16. Brandow S.L., Chen M.-S., Wang T., Dulcey C.S., Calvert J.M., Bohland J.F., Calabrese G.S., Dressick W.J. J. Electrochem. Soc. 144:1997;3425.
17. Dressick W.J., Calvert J.M. Jpn. J. Appl. Phys. 32:(12B):1993;5829.
18. Perkins F.K., Dobisz E.A., Brandow S.L., Calvert J.M., Kosakowski J.E., Marrian C.R.K. Appl. Phys. Lett. 68:1996;550.
19. Brandow S.L., Dressick W.J., Marrian C.R.K., Chow G.-M., Calvert J.M. J. Electrochem. Soc. 142:1995;2233.
20. Chen M.-S., Brandow S.L., Dulcey C.S., Dressick W.J., Taylor G.N., Bohland J.F., Georger J.H. Jr., Pavelchek E.K., Calvert J.M. J. Electrochem. Soc. 146:1999;1421.
21. Calvert J.M., Calabrese G.S., Bohland J.F., Chen M.-S., Dressick W.J., Dulcey C.S., Georger J.H. Jr., Kosakowski J., Pavelchek E.K., Rhee K.W., Shirey L.M. J. Vac. Sci. Tech B. 12:1994;3884.
22. Dressick W.J., Dulcey C.S., Georger J.H. Jr., Calabrese G.S., Calvert J.M. J. Electrochem. Soc. 141:1994;210.
23. Dressick W.J., Kondracki L.M., Chen M.-S., Brandow S.L., Matijević E., Calvert J.M. Coll. Surf. A. 108:1996;101.
24. Chen M.-S., Dulcey C.S., Brandow S.L., Leonard D.N., Calvert J.M., Dressick W.J., Sims C.W. J. Electrochem. Soc. 147:2000;2607.
25. Dressick W.J., Dulcey C.S., Brandow S.L., Chen M.-S., Leonard D.N., Calvert J.M., Sims C.W. Romankiw L.T., Osaka T., Yamazaki Y., Madore C. Electrochemical Technology Applications in Electronics III: Proceedings of the Third International Symposium, (Volume 99-34). 2000;179 The Electrochemical Society, Pennington, NJ.
26. Vargo T.G., Gardella J.A. Jr., Calvert J.M., Chen M.-S. Science. 262:1993;1711.
27. Hanawa R., Uetani Y., Hanabata M. Proc. SPIE Int. Soc. Opt. Eng. 1925:1993;227.
28. Asaumi S., Furuta M. J. Electrochem. Soc. 139:1992;889.
29. Asaumi S., Nakane H. J. Electrochem. Soc. 137:1990;2546.
30. Reichmanis E., Houlihan F.M., Nalamasu O., Neenan T.X. Thompson L.F., Wilson C.G., Tagawa S. Polymers for Microelectronics: Resists and Dielectrics, A.C.S. Symp. Ser. 537. 1994;2 American Chemical Society, Washington, DC.
31. Geer R.E., Stenger D.A., Chen M.-S., Calvert J.M., Shashidhar R., Jeong Y.H., Pershan P.S. Langmuir. 10:1994;1171.
32. Schilling M.L., Katz H.E., Houlihan F.M., Stein S.M., Hutton R.S., Taylor G.N. J. Electrochem. Soc. 143:1996;691.
33. Olim M. J. Electrochem. Soc. 144:1997;4331.
34. Smy T., Tan L., Dew S.K., Brett M.J., Shacham-Diamond Y., Desilva M. J. Electrochem. Soc. 144:1997;2215.
35. Helbert J.N., Saha N. J. Adhesion Sci. Tech. 5:1991;905.
36. Ponjeé J.J., Marriott V.B., Michielson M.C.B.A., Touwslager F.J., van Velzen P.N.T., van der Wel H. J. Vac. Sci. Tech. B. 8:1990;463.
37. Calabrese G.S., Calvert J.M., Chen M.-S., Dressick W.J., Dulcey C.S., Georger J.H. Jr., Bohland J.F. Jr. U.S. Patent. 1996;5 510 216.
38. Brandow S.L., Dressick W.J., Dulcey C.S., Koloski T.S., Shirey L.M., Schmidt J., Calvert J.M. J. Vac. Sci. Tech. B. 15:1997;1818.