InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave tranceivers

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 125-128

  Baeyens, Y ^a   Georgiou, G ^a   Weiner, J ^a   Houtsma, V ^a   Paschke, P ^a   Lee, Q ^a   Leven, A ^a   Kopf, R ^a   Frackoviak, J ^a   Chen, C ^a   Liu, C T ^a   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DEMULTIPLEXING; ELECTRIC BREAKDOWN; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCEIVERS; VARIABLE FREQUENCY OSCILLATORS;

LIGHTWAVE TRANSCEIVERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035166991     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. 40 Gb/s clock and data recovery/1:4 DEMUX IC in SiGe technology
2. Dry-etch fabrication of reduced area InGaAs/InP HBTs
3. High-speed multiplexers: A 50 Gb/s 4:1 MUX in InP HBT technology
4. Decision and driver circuits
5. Compact InP-based HBT VCOs with a wide tuning range at W- and D-band
6. Beyond 40 Gb/s?
7. Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
8. A 74-GHz bandwidth InAlAs-InGaAs/InP HBT distributed amplifier with 13-dB gain