Compact inp-based hbt vcos with a wide tuning range at w- and .d-band

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 12, 2000, Pages 2403-2408

  Baeyens, Yves ^a   Dorschky, Claus ^a   Nils Weimann, Member ^b   Lee, Qinghung ^a   Kopf, Rose ^a   Georgiou, George ^a   Mattia, John Paul ^a   Hamm, Robert ^a   Chen, Young Kai ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Heterojunction bipolar transistors; Indium compounds; Millimeter wave bipolar transistor oscillators; Monolithic microwave integrated circuits (MMICs); Voltage controlled oscillators (VCOs)

Indexed keywords

BANDWIDTH; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; VARIABLE FREQUENCY OSCILLATORS;

MILLIMETER-WAVE BIPOLAR TRANSISTOR OSCILLATORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034431326     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.898990     Document Type: Article

References (10)

1. S. E. Rosenbaum, B. K. Kormanyos, L. M. Jelloian, M. Matloubian, A. S. Brown, L. E. Larson, L. D. Nguyen, M. A. Thompson, L. P. Katehi, and G. M. Rebeiz, "155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators," IEEE Trans. Microwave Theory Tech., vol. 43, no. 4, pp. 927-932, 1995.
2. Y. Kwon, D. Pavlidis, T. L. Brock, and D. C. Streit, "A D-band monolithic fundamental oscillator using InP-based HEMT's," IEEE Trans. Microwave Theory Tech., vol. 41, no. 12, pp. 2336-2344, 1993.
3. H.Wang, K.W. Chang, L. T. Tran, J. C. Cowles, T. R. Block, E.W. Lin, G. S. Dow, A. K. Oki, D. C. Streit, and B. R. Allen, "Low phase noise millimeter-wave frequency sources using InP-based HBT MMIC technology," IEEE J. Solid-State Circuits, vol. 31, no. 10, pp. 1419-1425, 1996.
4. K. Uchida, I. Aoki, H. Matsuura, T. Yakihara, S. Kobayashi, S. Oka, T. Fujita, and A. Miura, "104 and 134 GHz InGaP/InGaAs HBT oscillators," in Proc. 1999 GaAs IC Symp., Monterey, CA, 1999, pp. 237-240.
5. J. R. Bender and C.Wong, "Push-push design extends bipolar frequency range," Microwaves and RF, pp. 91-98, Oct. 1983.
6. K.W. Kobayashi, A. K. Oki, L. T. Tran, J. Cowles, A. Gutierrez-Aitken, F. Yamada, T. Block, and D. C. Streit, "A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth," IEEE J. Solid-State Circuits, vol. 34, no. 9, pp. 1225-1232, 1999.
7. R. F. Kopf, R. A. Hamm, R. W. Ryan, A. Tate, R. Pullela, G. Georgiou, J.-P. Mattia, and Y.-K. Chen, "Dry-Etch fabrication of reduced area In-GaAs/InP HBTs," J. Electron. Mater., vol. 29, no. 2, p. 222, 2000.
8. R. F. Kopf, R. A. Hamm, R. W. Ryan, J. Burm, A. Tate, Y.-K. Chen, G. Georgiou, D. V. Lang, and F. Ren, "Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability," J. Electron. Mater., vol. 27, no. 8, pp. 954-964, 1998.
9. M. Sokolich, D. Docter, Y. Brown, A. Kramer, J. Jensen, W. Stanchina, S. Thomas, C. Fields, D. Ahmari, M. Lui, R. Martinez, and J. Duvall, "A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology," in Proc. IEEE GaAs IC Symp., Atlanta, GA, 1998, pp. 117-120.
10. A. Bangert, M. Schlechtweg, M. Lang, W. Haydl, W. Bronner, T. Fink, K. Kohler, and B. Raynor, "W-band MMIC VCO with a large tuning range using a pseudomorphic HFET," in Proc. 1996 IEEE MTT-S Int. Microwave Symp., San Francisco, CA, 1996, pp. 525-528.