Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability

Journal of Electronic Materials

Volumn 27, Issue 8, 1998, Pages 954-960

  Kopf, R F ^a   Hamm, R A ^a   Ryan, R W ^a   Burm, J ^a   Tate, A ^a   Chen, Y K ^a   Georgiou, G ^a   Lang, D V ^a   Ren, F ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Double heterojunction bipolar transistor (DHBT) structures; Encapsulation; InGaAs InP; Passivation

Indexed keywords

EID: 0000158439     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0127-y     Document Type: Article

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