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Volumn 34, Issue 9, 1999, Pages 1225-1232

A 108-GHz InP-HBT Monolithic Push-Push VCO with Low Phase Noise and Wide Tuning Bandwidth

Author keywords

Heterojunction bipolar transistor (HBT); InP; Monolithic microwave integrated circuit (MMIC); Oscillator; Push push; Voltage controlled oscillator; W band

Indexed keywords


EID: 0000679024     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.782080     Document Type: Article
Times cited : (97)

References (9)
  • 1
    • 0038822527 scopus 로고    scopus 로고
    • A D-band monolithic fundamental oscillator using InP-Based HEMTs
    • Atlanta, GA
    • Y. Kwon, D. Pavlidis, T. Brock, and D. C. Streit, "A D-band monolithic fundamental oscillator using InP-Based HEMTs," in 1993 IEEE MMWMC Symp. Dig., Atlanta, GA, pp. 49-52.
    • 1993 IEEE MMWMC Symp. Dig. , pp. 49-52
    • Kwon, Y.1    Pavlidis, D.2    Brock, T.3    Streit, D.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.