Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications

Journal of Electronic Materials

Volumn 29, Issue 2, 2000, Pages 222-224

  Kopf, R F ^a   Hamm, R A ^a   Wang, Y C ^a   Ryan, R W ^a   Tate, A ^a   Melendes, M A ^a   Pullela, R ^a   Chen, Y K ^a   Thevin, J ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b Instruments SA Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; EMISSION SPECTROSCOPY; PLASMA ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033877586     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0146-9     Document Type: Article

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