Oxidation in ozone

Fujitsu Scientific and Technical Journal

Volumn 32, Issue 1, 1996, Pages 128-135

  Nakanishi, Toshiro ^a,b,c   Ohkubo, Satoshi ^b,c,d   Tamura, Yasuyuki ^b,c,d  

^a KOBE UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOSFET DEVICES; OXIDATION; OXIDES; OZONE; TECHNOLOGY; ULSI CIRCUITS; ULTRAVIOLET RADIATION;

OXIDE LAYERS; PRE-TREATMENT;

GATES (TRANSISTOR);

EID: 0029706525     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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5. Sugino, R., Nara, Y., Horie, H., and Ito, T.: Ultraviolet Excited Cl-radical Etching of Si through Native Oxides. J. Appl. Phys., 76, 5498 (1994).
6. Chao, S. C., Pitchai, R., and Lee, Y. H.: Enhancement in Thermal Oxidation of Silicon by Ozone. J. Electrochem. Soc., 136, 2751 (1989).
7. Laider, K. J.: Chemical Kinetics. McGraw-Hill, 1965.
8. 2- J. Electrochem. Soc. 122, 284 (1975).
9. Awaji, N., Sugita, Y., Nakanishi, T., and Komiya, S.: Photon Factory Activity Report 94-Y012, (1995).
10. Kaneta, C.: Hole Trapping due to Local Distortion and Impurities in Amorphous Silicon Dioxide. 26th IEEE Semiconductor Interface.