UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

Materials Science in Semiconductor Processing

Volumn 2, Issue 1, 1999, Pages 23-27

  Zetterling, Carl Mikael ^a   Östling, Mikael ^a   Harris, Chris I ^b   Wood, Peter C ^c   Wong, S Simon ^d  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

^c 33 Tanakamiya cho Takeda F   (United States)

^d Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CHARGE CARRIERS; INTERFACES (MATERIALS); SILICON CARBIDE; THERMOOXIDATION; ULTRAVIOLET RADIATION; VOLTAGE MEASUREMENT;

ULTRAVIOLET OZONE PRECLEANING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032630485     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(98)00048-1     Document Type: Article

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