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Acta Materialia

Volumn 50, Issue 13, 2002, Pages 3435-3452

Microstructural evolution in passivated Al films on Si substrates during thermal cycling

(6) Legros, M a Hemker, K J b Gouldstone, A c Suresh, S c Keller Flaig, R M d Arzt, E d

a INSTITUT JEAN LAMOUR (France)

b Johns Hopkins University (United States)

c Department of Civil and Environmental Engineering (United States)

d MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

Al; Dislocations; In situ TEM; Plastic deformation; Thin films

Indexed keywords

ABSORPTION; ALUMINUM; DIFFUSION; DISLOCATIONS (CRYSTALS); GRAIN GROWTH; INTERFACES (MATERIALS); MICROSTRUCTURE; PASSIVATION; PLASTIC DEFORMATION; SILICON; STRAIN; SUBSTRATES; THERMAL CYCLING; THERMAL EFFECTS; THERMOMECHANICAL TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

THERMAL STRAIN;

METALLIC FILMS;

EID: 0036681512 PISSN: 13596454 EISSN: None Source Type: Journal
DOI: 10.1016/S1359-6454(02)00157-X Document Type: Article

Times cited : (64)

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