In situ electron spin resonance of initial oxidation processes of Si surfaces

Applied Surface Science

Volumn 162, Issue , 2000, Pages 299-303

  Umeda, Takahide ^a,b   Yamasaki, Satoshi ^a   Nishizawa, Masayasu ^a   Yasuda, Tetsuji ^a   Tanaka, Kazunobu ^a,b  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; OXIDATION; SURFACE STRUCTURE; VACUUM APPLICATIONS;

DANGLING BONDS;

SILICON WAFERS;

EID: 0034250882     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00207-5     Document Type: Article

References (18)

1. Brower K.L. Appl. Phys. Lett. 43:1983;1111.
2. Carlos W.E. Appl. Phys. Lett. 50:1987;1450.
3. Poindexter E.H., Caplan P.J., Deal B.E., Razouk R.R. J. Appl. Phys. 52:1981;879.
4. Stesman A., Afanas'ev V.V. J. Appl. Phys. 83:1998;2449.
5. Stesmans A., Nouwen B., Afanas'ev V.V. Phys. Rev. B. 58:1998;15801.
6. Stesmans A. Appl. Phys. Lett. 48:1996;973.
7. Caplan P.J., Poindexter E.H., Deal B.E., Razouk R.R. J. Appl. Phys. 50:1979;5847.
8. Lenahan P.M., Dressendorfer P.V. J. Appl. Phys. 55:1984;3495.
9. Poindexter E.H., Gerardi G.J., Rueckel M.-E., Caplan P.J., Johnson N.M., Biegelsen D.K. J. Appl. Phys. 56:1984;2844.
10. Gerardi G.J., Poindexter E.H., Caplan P.J., Johnson N.M. Appl. Phys. Lett. 49:1986;348.
11. Demuth J.E., Persson B.N.J., Schell-Sorokin A.J. Phys. Rev. Lett. 51:1983;2214.
12. Ortega J., Flores F., Yeyati A.L. Phys. Rev. B. 58:1998;4584.
13. Haneman D. Jpn. J. Appl. Phys. Suppl. 2, Pt. 2. 1974;371.
14. Chung M.F., Haneman D. J. Appl. Phys. 37:1966;1879.
15. Haneman D. Phys. Rev. 170:1968;705.
16. Haneman D., Chung M.F., Taloni A. Phys. Rev. 170:1968;719.
17. Umeda T., Yamasaki S., Isoya J., Tanaka K. Phys. Rev. B. 59:1999;4849.
18. Morita M., Ohmi T., Hasegawa E., Kawakami M., Ohwada M. J. Appl. Phys. 68:1990;1272.