Ohmic contacts to n-type polycrystalline SiC for high-temperature micromechanical applications

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 180-185

  Kriz, J ^a   Gottfried, K ^a   Scholz, Th ^b   Kaufmann, Ch ^a   Gessner T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b SGS Institut Fresenius GmbH   (Germany)

Author keywords

Atomic force microscopy; Micromechanical applications; Polycrystalline

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE; HIGH TEMPERATURE APPLICATIONS; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACE ROUGHNESS; TITANIUM ALLOYS;

CIRCULAR TRANSMISSION LINE METHOD; MICROMECHANICAL APPLICATIONS;

OHMIC CONTACTS;

EID: 0031122968     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01959-9     Document Type: Article

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