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Surface and Interface Analysis

Volumn 33, Issue 6, 2002, Pages 500-505

Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiC

(7) Chang, W a Feng, Z C a Lin, J a,c Liu, R a Wee, A T S b Tone, K a Zhao, J H a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b Axcel Photonics Inc (United States)

c RUTGERS UNIVERSITY (United States)

Author keywords

6H SiC; Annealing; FTIR; Ion implantation

Indexed keywords

AMORPHOUS SILICON CARBIDE; CRYSTALLINE SILICON CARBIDE; ELEVATED TEMPERATURE IMPLANTATION; IMPLANTATION-INDUCED AMORPHOUS PHASE; LATTICE QUALITY; LAYER THICKNESS; LORENTZ-DRUDE OSCILLATOR MODEL; PHONON DAMPING CONSTANT;

ALUMINUM; AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; CARBON; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; MATHEMATICAL MODELS; OPTICAL PROPERTIES;

SILICON CARBIDE;

EID: 0036609674 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1411 Document Type: Article

Times cited : (7)

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