Investigation and modeling of the infrared optical properties of direct current sputtered SiC films on silicon

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 3053-3058

  Lei, Y M ^a   yu, Y H ^a   Cheng, L L ^a   Sundaraval, B ^b   Luo, E Z ^b   Ren, C X ^a   Zou, S C ^a   Wong, S P ^b   Chen, D H ^b   Wilson, I H ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBON FILMS; REFLECTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

COMPLEX DIELECTRIC FUNCTIONS; EFFECTIVE MEDIUM THEORIES; FORMATION MECHANISM; INFRARED OPTICAL PROPERTIES; INFRARED REFLECTANCE; NON-RUTHERFORD BACKSCATTERINGS; SILICON CARBIDE FILMS; STRUCTURAL INVESTIGATION;

OPTICAL PROPERTIES;

EID: 33645230809     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1286467     Document Type: Article

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