Complete surface exfoliation of 4H-SiC by H+- and Si+-coimplantation

Applied Physics Letters

Volumn 76, Issue 22, 2000, Pages 3265-3267

  Bennett, J A ^a   Holland, O W ^a,b   Budde, M ^a   Thomas, D K ^b   Feldman, L C ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009685705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126640     Document Type: Article

References (11)

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