An infrared study of Ge+ implanted SiC

Applied Surface Science

Volumn 102, Issue , 1996, Pages 120-124

  Zorba, T T ^a   Mitsas, C L ^a   Siapkas, I D ^a   Terzakis, G Z ^a   Siapkas, D I ^a   Pacaud, Y ^b   Skorupa, W ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; BAND STRUCTURE; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; MOLECULAR VIBRATIONS; NONDESTRUCTIVE EXAMINATION; SEMICONDUCTING GERMANIUM; SILICON CARBIDE;

DAMAGE DEPTH PROFILES; HETERONUCLEAR SILICON CARBON BONDS; NORMALIZED ATOMIC VIBRATIONAL DAMPING; RESTSTRAHLEN BAND; VIBRATIONAL BANDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030564795     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00045-1     Document Type: Article

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