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Volumn 241, Issue 3, 2002, Pages 320-324

Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE

(3) Sung, Li Wei a Lin, Hao Hsiung a Chia, Chih Ta b

b NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

Author keywords

A1. Crystal structures; A1. Growth models; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; CRYSTALLIZATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; THIN FILMS;

OPTICAL QUALITY;

GALLIUM NITRIDE;

EID: 0036606618 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(02)01289-7 Document Type: Article

Times cited : (13)

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