Growth control of cubic GaN and GaAlN (GaInN) alloys by RHEED oscillations

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 497-501

  Martinez Guerrero, E ^a   Chabuel, F ^a   Jalabert, D ^a   Daudin, B ^a   Feuillet, G ^a   Mariette, H ^b   Aboughe Nze P ^c   Monteil, Y ^c  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ALUMINUM NITRIDES; GALLIUM NITRIDES; GROWTH CONTROL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221958     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<497::AID-PSSA497>3.0.CO;2-R     Document Type: Article

References (5)

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4. T. BÖTTCHER, S. EINFELDT, V. KIRCHNER, S. FIGGE, H. HEINKE, D. HOMMEL; H. SELKE, and P.L. RYDER, Appl. Phys. Lett. 73, 3232 (1998).
5. C. ADELMANN, R. LANGER, E. MARTINEZ-GUERRERO, H. MARIETTE, G. FEUILLET, and B. DAUDIN, J. Appl. Phys., submitted.