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Volumn 230, Issue 3-4, 2001, Pages 421-425

MBE growth of cubic AlyGa1-yN/GaN heterostructures - Structural, vibrational and optical properties

(9) As, D J a Frey, T a Bartels, M a Lischka, K a Goldhahn, R b Shokhovets, S b Tabata, A c Fernandez, J R L c Leite, J R c

a UNIVERSITY OF PADERBORN (Germany)

b ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

c UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

A1. Characterization; A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Gallium compounds; B1. Nitrides

Indexed keywords

CATHODOLUMINESCENCE; ELLIPSOMETRY; ENERGY GAP; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR VIBRATIONS; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY CRYSTALLOGRAPHY;

EPILAYERS;

HETEROJUNCTIONS;

EID: 0035451241 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01249-0 Document Type: Article

Times cited : (7)

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