MOVPE growth of high quality cubic GaN on GaAs: The role of growth rates

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 509-512

  Funato, M ^a   Ogawa, M ^a   Ishido, T ^a   Fujita, Sz ^a   Fujita, Sg ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON EMISSION; EXCITONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

EXCITONIC EMISSION; GALLIUM NITRIDES;

SEMICONDUCTING FILMS;

EID: 0033221925     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<509::AID-PSSA509>3.0.CO;2-E     Document Type: Article

References (9)

1. S. NAKAMURA, J. Vac. Sci. Technol. A 13, 705 (1995).
2. S. NAKAMURA, M. SENOH, N. IWASA, S. NAGAHAMA, T. YAMADA, and T. MUKAI, Jpn. J. Appl. Phys. 34, L1332 (1995).
3. T. MUKAI, K. TAKEKAWA, and S. NAKAMURA, Jpn. J. Appl. Phys. 37, L839 (1998).
4. J. WU, H. YAGUCHI, K. ONABE, Y. SHIRAKI, and R. ITO, Jpn. J. Appl. Phys. 37, 1440 (1998).
5. A. NAKADAIRA and H. TANAKA, J. Electron. Mater. 26, 320 (1997).
6. H. TSUCHIYA, K. SUNABA, S. YONEMURA, T. SUEMASU, and F. HASEGAWA, Jpn. J. Appl. Phys. 36, L1 (1997).
7. H. TACHIBANA, T. ISHIDO, M. OGAWA, M. FUNATO, SZ. FUJITA, and SG. FUJITA, J. Cryst. Growth 196, 41 (1999).
8. T. LEI, M. FANCIULLI, R. J. MOLNAR, T. D. MOUSTAKAS, R. J. GRAHAM, and J. SCANLON, Appl. Phys. Lett. 72, 3056 (1998).
9. H. OKUMURA, S. MISAWA, T. OKAHISA, and S. YOSHIDA, J. Cryst. Growth 136, 361 (1994).