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Volumn 197, Issue 1-2, 1999, Pages 31-36

Surface irregularities of MBE grown cubic GaN layers

(8) Lima, A P a,b Frey, T a Kohler U a Wang, C a As, D J a Schottker B a Lischka, K a Schikora, D a

Author keywords

Cubic GaN; Interface GaN GaAs(0 0 1); Meltback etching; Plasma assisted molecular beam epitaxy; Semiconductor growth; Surface defects

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; ETCHING; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; SUBSTRATES;

GALLIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0033079884 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00902-6 Document Type: Article

Times cited : (11)

References (10)

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