Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(0 0 1) substrates by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 323-327

  Yaguchi, Hiroyuki ^a   Wu, Jun ^a   Zhang, Baoping ^b   Segawa, Yusaburo ^b   Nagasawa, Hiroyuki ^c   Onabe, Kentaro ^c   Shiraki, Yasuhiro ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c HOYA CORPORATION   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Cubic; GaN; Hexagonal; Metalorganic vapor phase epitaxy; Photoluminescence; Raman spectroscopy

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON EMISSION; EXCITONS; LIGHT POLARIZATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTOR GROWTH;

POLARIZED MICRO RAMAN SPECTRA;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477174     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00672-1     Document Type: Article

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