Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique

Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 791-795

  Hung, C C ^a,b   Lin, H C ^b   Shih, H C ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Etch rate; Plasma etching; Profile angle; Response surface methodology; Transformer coupled plasma; Trench etch

Indexed keywords

CHLORINE; ION BOMBARDMENT; OXYGEN; SILICON;

SHALLOW TRENCH ISOLATION (STI);

PLASMA ETCHING;

EID: 0036604561     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00004-7     Document Type: Article

References (24)

1. Design and analysis of experiments