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Volumn 43, Issue 12, 2000, Pages 87-88,-90,-92

Observations on the chemistry and physics of STI etch in Cl2-Ar plasmas

Author keywords

[No Author keywords available]

Indexed keywords

CHEMISTRY; CHLORINE COMPOUNDS; ION BOMBARDMENT; MASKS; OXIDATION; PLASMA THEORY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS;

EID: 0342903235     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (11)
  • 1
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    • Deep-submicron trench profile control using a magnetron enhanced reactive ion etching system for shallow trench isolation
    • May/June
    • Chung-Kyu Yeon, Hyuk-Joon You, "Deep-submicron Trench Profile Control Using a Magnetron Enhanced Reactive Ion Etching System for Shallow Trench Isolation," J. Vac. Sci. Technol. A, Vol. 16, No. 3, p. 1502, May/June 1998.
    • (1998) J. Vac. Sci. Technol. A , vol.16 , Issue.3 , pp. 1502
    • Yeon, C.-K.1    Hyuk-Joon, Y.2
  • 3
    • 0031500120 scopus 로고    scopus 로고
    • Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine
    • Julu/Aug.
    • J.P. Chang, et al., "Kinetic Study of Low Energy Argon Ion-enhanced Plasma Etching of Polysilicon with Atomic/Molecular Chlorine," J. Vac. Sci. Technol. A, Vol. 15, No. 4, p. 1853, Julu/Aug. 1997.
    • (1997) J. Vac. Sci. Technol. A , vol.15 , Issue.4 , pp. 1853
    • Chang, J.P.1
  • 5
    • 0033441635 scopus 로고    scopus 로고
    • Ion-enhanced etching of Si(100) with molecular chlorine: Reaction mechanisms and product yields
    • Nov./Dec.
    • R.S. Goodman, N. Materer, S.R. Leone, "Ion-enhanced Etching of Si(100) with Molecular Chlorine: Reaction Mechanisms and Product Yields," J. Vac. Sci. Technol. A, Vol. 17, No. 6, p. 3340, Nov./Dec. 1999.
    • (1999) J. Vac. Sci. Technol. A , vol.17 , Issue.6 , pp. 3340
    • Goodman, R.S.1    Materer, N.2    Leone, S.R.3
  • 6
    • 0001698460 scopus 로고
    • 2: The effect of flux ratio
    • May/June
    • 2: The Effect of Flux Ratio," J. Vac. Sci. Technol. B, Vol. 12, No. 3, p. 1384, May/June 1994.
    • (1994) J. Vac. Sci. Technol. B , vol.12 , Issue.3 , pp. 1384
    • Coburn, J.W.1
  • 7
    • 0033689248 scopus 로고    scopus 로고
    • Feature evolution during plasma etching. II. Polycrystalline silicon etching
    • Jan./Feb.
    • J.M. Lane, et al., "Feature Evolution During Plasma Etching. II. Polycrystalline Silicon Etching," J. Vac. Sci. Technol. A, Vol. 18, No. 1, p. 188, Jan./Feb. 2000.
    • (2000) J. Vac. Sci. Technol. A , vol.18 , Issue.1 , pp. 188
    • Lane, J.M.1
  • 8
    • 0032340434 scopus 로고    scopus 로고
    • Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon
    • Jan./Feb.
    • J.P. Chang, A.P. Mahorowala, H.H. Sawin, "Plasma-surface Kinetics and Feature Profile Evolution in Chlorine Etching of Polysilicon," J. Vac. Sci. Technol. A, Vol. 16, No. 1, p. 217, Jan./Feb. 1998.
    • (1998) J. Vac. Sci. Technol. A , vol.16 , Issue.1 , pp. 217
    • Chang, J.P.1    Mahorowala, A.P.2    Sawin, H.H.3
  • 9
    • 0000725541 scopus 로고    scopus 로고
    • Effects of etch products and surface oxidation on profile evolution during electron cyclotron resonance plasma etching of Poly-Si
    • Sept./Oct.
    • M. Tuda, K. Ono, K. Nishikawa, "Effects of Etch Products and Surface Oxidation on Profile Evolution During Electron Cyclotron Resonance Plasma Etching of Poly-Si," J. Vac. Sci. Technol. B, Vol. 14, No. 5, p. 3291, Sept./Oct. 1996.
    • (1996) J. Vac. Sci. Technol. B , vol.14 , Issue.5 , pp. 3291
    • Tuda, M.1    Ono, K.2    Nishikawa, K.3
  • 10
    • 0001586874 scopus 로고
    • + polysilicon: HBr process chemistry
    • Jan./Feb.
    • + Polysilicon: HBr Process Chemistry," J. Vac. Sci. Technol. B, Vol. 12, No. 1, p. 461, Jan./Feb. 1994.
    • (1994) J. Vac. Sci. Technol. B , vol.12 , Issue.1 , pp. 461
    • Tipton, G.D.1    Blain, M.G.2
  • 11
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    • Effect of supplied substrate bias frequency in Ultrahigh-frequency plasma discharge for precise etching processes
    • Nov./Dec.
    • Seiji Samukawa, Hiroto Ohtake, "Effect of Supplied Substrate Bias Frequency in Ultrahigh-frequency Plasma Discharge for Precise Etching Processes," J. Vac. Sci. Technol. A, Vol. 14, No. 6, p. 3004, Nov./Dec. 1996.
    • (1996) J. Vac. Sci. Technol. A , vol.14 , Issue.6 , pp. 3004
    • Samukawa, S.1    Ohtake, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.