An anisotropic U-shaped SF6-based plasma silicon trench etching investigation

Microelectronic Engineering

Volumn 40, Issue 2, 1998, Pages 85-97

  Burtsev, A ^a   Li, Y X ^a   Zeijl, H W ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Response surface methodology; SF6 plasma; Trench etching

Indexed keywords

ANISOTROPY; CATALYST SELECTIVITY; HELIUM; MATHEMATICAL MODELS; OXYGEN; SEMICONDUCTING SILICON; SULFUR COMPOUNDS;

RESPONSE SURFACE METHODOLOGY; TRENCH ETCHING;

PLASMA ETCHING;

EID: 0032117165     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00149-X     Document Type: Article

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