Models for subthreshold and above-threshold currents in 0.1-μm pocket n-MOSFETs for low-voltage applications

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 832-839

  Pang, Yon Sup ^a,b   Brews, John R ^a,b  

^a IEEE   (United States)

^b University of Arizona   (United States)

Author keywords

Drift diffusion current transport equation; Modeling; Pocket MOSFETs; Poisson's equation

Indexed keywords

CHARGE-SHEET APPROXIMATION; DRIFT-DIFFUSION CURRENT TRANSPORT EQUATION; POCKET MOSFET; SUBTHRESHOLD CURRENT; TWO-DIMENSIONAL POISSON EQUATION;

APPROXIMATION THEORY; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER SUPPLIES TO APPARATUS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; POISSON EQUATION; POLYNOMIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

MOSFET DEVICES;

EID: 0036565452     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998592     Document Type: Article

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