Analytical subthreshold surface potential model for pocket n-MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2209-2216

  Pang, Yon Sup ^a   Brews, John R ^a  

^a University of Arizona   (United States)

Author keywords

Drain induced barrier lowering (DIBL); Modeling; Off state leakage current; Pocket MOSFETs; Poisson's equation; Threshold voltage

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; POISSON EQUATION;

DRAIN-INDUCED BARRIER LOWERING; OFF-STATE LEAKAGE CURRENT; POCKET N-MOSFETS; SUBTHRESHOLD SURFACE POTENTIAL MODEL;

MOSFET DEVICES;

EID: 0037001792     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805235     Document Type: Article

References (20)

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