Pass transistor designs using pocket implant to improve manufacturability for 256 Mbit DRAM and beyond

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 87-90

  Chatterjee, A ^a   Liu, J ^a   Aur, S ^a   Mozumder, P K ^a   Rodder, M ^a   Chen, I C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE EQUIPMENT; HOT CARRIERS; LEAKAGE CURRENTS; PERFORMANCE; RELIABILITY; SUBSTRATES;

CHANNEL HOT ELECTRON; DYNAMIC RANDOM ACCESS MEMORY (DRAM); PASS TRANSISTOR; POCKET IMPLANT;

TRANSISTORS;

EID: 0028738035     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)