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Volumn , Issue , 1985, Pages 230-233
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HALO DOPING EFFECTS IN SUBMICRON DI-LDD DEVICE DESIGN.
a a
a
IBM
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTOR DEVICE MANUFACTURE;
DI-LDD;
HALO DOPING;
SUBMICRON CHANNEL DEVICES;
SEMICONDUCTOR MATERIALS;
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EID: 0022290066
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/iedm.1985.190938 Document Type: Conference Paper |
Times cited : (54)
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References (3)
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