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Volumn , Issue , 1999, Pages 323-326
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Role of base layer in CVD Si3N4 stack gate dielectrics on the process controllability and reliability in direct tunneling regime
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CURRENT VOLTAGE CHARACTERISTICS;
DIELECTRIC MATERIALS;
ELECTRIC BREAKDOWN;
ELLIPSOMETRY;
MOS CAPACITORS;
MOSFET DEVICES;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON NITRIDE;
THICKNESS MEASUREMENT;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY PHOTOELECTRON SPECTROSCOPY;
BASE LAYER;
CAPACITANCE VOLTAGE CHARACTERISTICS;
DIELECTRIC RELIABILITY;
GATE DIELECTRICS;
PROCESS CONTROLLABILITY;
SPECTROSCOPIC ELLIPSOMETRY;
TIME DEPENDENT DIELECTRIC BREAKDOWN;
GATES (TRANSISTOR);
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EID: 0033352173
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (8)
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References (10)
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