Process modeling for future technologies

IBM Journal of Research and Development

Volumn 46, Issue 2-3, 2002, Pages 339-346

  Law, Mark E ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

TECHNOLOGY COMPUTER-AIDED DESIGN (TCAD);

ELECTRON DEVICE MANUFACTURE;

EID: 0036508206     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.462.0339     Document Type: Review

References (50)

1. Historical perspectives on ion implantation
2. Formation of stacking faults and enhanced diffusion in the oxidation of silicon
3. Point defects and dopant diffusion in silicon
4. Efficient modeling parameter extraction for dual pearson approach to simulation of implanted impurity profiles in silicon
5. A two-dimensional, accurate and computationally efficient model for boron implantation through oxide layers into silicon
6. Application of the Boltzmann transport equation to the calculation of range profiles and recoil implantation in semiconductors and multilayer targets
7. Calculation of channeling effects during ion implantation using the Boltzmann transport equation
8. Ion implantation calculations in two dimensions using the Boltzmann transport equation
9. Monte Carlo simulation of ion implantation into single-crystal silicon including new models for electronic stopping and cumulative damage
10. Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation
11. Determination of lattice disorder profiles in crystals by nuclear backscattering
12. A detailed physical model for ion implant induced damage in silicon
13. Two-dimensional modeling of ion implantation induced point defects
14. Effects of dislocations in silicon transistors with implanted bases
15. Effects of dislocations in silicon transistors with implanted emitters
16. Atomic modeling of homogeneous nucleation of dislocations from condensation of point defects in silicon
17. A systematic analysis of defects in ion implanted silicon
18. Profile parameters of implanted-diffused arsenic layers in silicon
19. Precipitation as the phenomena responsible for the electrically inactive arsenic in silicon
20. B diffusion and clustering in ion implanted Si: The role of B Cluster precursors
21. Activation and deactivation of implanted B in Si
22. Predictive simulation of transient activation processes in boron-doped silicon structures
23. A physics based modeling approach for the simulation of anomalous boron diffusion and clustering behaviours
24. Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials
25. Short-time diffusion of zinc in silicon for the study of intrinsic point defects
26. Measurement of silicon interstitial diffusivity
27. Process physics determining 2-D impurity profiles in VLSI devices
28. Determination of Si self-interstitial diffusivities from the oxidation-enhanced diffusion in B doping-superlattices: The influence of the marker layers
29. Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination and formation volumes
30. Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena
31. Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion
32. PEPPER - A process simulator for VLSI
33. ALAMODE: A layered model development environment
34. Role of ion mass, implant dose, and wafer temperature on end-of-range defects
35. + implantation
36. The dependence of ultrashallow junction depths on impact dose rates
37. 2+ ion implants
38. The effect of dose rate on interstitial release from the end of range implant damage region in silicon
39. The effect of dose rate on ion implanted impurity profiles in silicon
40. Ion beam processing of silicon at kev energies: A molecular dynamics study
41. Diffusion of ion implanted boron in silicon: The effects of lattice defects and co-implanted impurities
42. Kinetics of high concentration arsenic deactivation at moderate to low temperatures
43. Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon
44. Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices
45. Effect of surface proximity on end-of-range loop dissolution in silicon
46. Two-dimensional transient enhanced diffusion and its impact on bipolar transistors
47. A physical model for implanted nitrogen diffusion and its effect on oxide growth