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Volumn 46, Issue 2-3, 2002, Pages 339-346

Process modeling for future technologies

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

EID: 0036508206     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.462.0339     Document Type: Review
Times cited : (6)

References (50)
  • 2
    • 9744227454 scopus 로고
    • Formation of stacking faults and enhanced diffusion in the oxidation of silicon
    • (1974) J. Appl. Phys. , vol.45 , pp. 1567-1573
    • Hu, S.M.1
  • 7
    • 0019227196 scopus 로고
    • Application of the Boltzmann transport equation to the calculation of range profiles and recoil implantation in semiconductors and multilayer targets
    • (1980) J. Appl. Phys. , vol.51 , pp. 6176
    • Christel, L.A.1    Gibbons, J.F.2
  • 13
    • 0015361003 scopus 로고
    • Determination of lattice disorder profiles in crystals by nuclear backscattering
    • (1972) J. Appl. Phys. , vol.43 , pp. 2973-2981
    • Ziegler, J.F.1
  • 19
    • 0019589589 scopus 로고
    • Atomic modeling of homogeneous nucleation of dislocations from condensation of point defects in silicon
    • (1981) Philos. Mag. A , vol.44 , pp. 101-125
    • Tan, T.Y.1
  • 32
  • 44
    • 84954099834 scopus 로고    scopus 로고
    • Diffusion of ion implanted boron in silicon: The effects of lattice defects and co-implanted impurities
    • University of Florida Press, Gainesville
    • (2001) Materials Science
    • Robertson, L.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.