Predictive simulation of transient activation processes in boron-doped silicon structures

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 493-496

  Lilak, Aaron D ^a   Law, Mark E ^a   Jones, Kevin S ^a   Giles, Martin D ^a   Andideh, Ebrahim ^a   Caturla, Maria Jose ^a   Diaz de la Rubia, Tomas ^a   Zhu, Jing ^a   Theiss, Silva ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ION IMPLANTATION; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ION IMPLANTED BORON;

SEMICONDUCTING SILICON;

EID: 0032265925     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)