The effect of dose rate on ion implanted impurity profiles in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 144-147

  Tian, S ^a   Yang, S H ^a   Morris, S ^a   Parab, K ^a   Tasch, A F ^a   Kamenitsa, D ^b   Reece, R ^b   Freer, B ^b   Simonton, R B ^b   Magee, C ^c  

^a The University of Texas at Austin   (United States)

^b EATON CORPORATION   (United States)

^c Evans East   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DOSIMETRY; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

ION IMPLANTED IMPURITY PROFILES; SINGLE CRYSTAL SILICON;

ION IMPLANTATION;

EID: 0030563474     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01280-X     Document Type: Article

References (12)

1. F.L. Vook and H.J. Stein, Radiat. Eff. 2 (1969) 23.
2. F.H. Eisen and B. Welch, in: Ion Implantation, eds. F.H. Eisen and L.T. Chadderton (Gordon and Breach, London, 1971) p. 459.
3. S.T. Picraux and F.L. Vook, Radiat. Eff. 11 (1971) 179.
4. A. Claverie, A. Roumili, N. Gessinn and J. Beauvillain, Mater. Sci. Eng. B 4 (1989) 205.
5. J.S. Williams, H.H. Tan, R.D. Goldberg, R.A. Brown and C. Jagadish, Mater. Res. Soc. Symp. Proc. Vol. 316 (1994) 15.
6. R. Simonton, J. Shi, T. Boden, P. Maillot and L. Larson, Mater. Res. Soc. Symp. Proc. Vol. 316 (1994) 153.
7. J. Narayan and O.W. Holland, J. Electrochem. Soc: Solid State Sci. and Technol. 131 (1984) 2651.
8. J. Linnros and G. Holmén, J. Appl. Phys. 62 (1987) 4737.
9. M. Craig, A. Sultan, K. Reddy, S. Banerjee, E. Ishida and L. Larson, submitted to J. Vac. Sci. Technol.
10. W.L. Smith, A. Rosencwaig, D.L. Willenborg, J. Opsal and M.W. Taylor, Solid Sate Tech., Jan. 1986, pp. 85-92.
11. F.F. Morehead, Jr. and B.L. Crowder, Radiat. Eff. 6 (1970) 27.
12. S.-H. Yang, S.J. Morris, D.L. Lim, A.F. Tasch, R.B. Simonton, D. Kamenitsa, C. Magee and G. Lux, J. Eletron. Mater. 23 (1994) 801.