Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF+2 ion implants

Thin Solid Films

Volumn 308-309, Issue 1-4, 1997, Pages 562-569

  Downey, Daniel F ^a   Osburn, Carlton M ^b   Cummings, James J ^a   Daryanani, Sonu ^a   Falk, Scott W ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

B+ ion implants; BF+2 ion implants; Ultra shallow junctions

Indexed keywords

AMORPHIZATION; ANNEALING; BORON; BORON COMPOUNDS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; ION IMPLANTATION; OXIDATION; SECONDARY ION MASS SPECTROMETRY;

DOSE RATE EFFECTS; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 0347937438     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00494-X     Document Type: Article

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