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Volumn 15, Issue 3, 2002, Pages 453-464
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Transparency versus efficiency: Important considerations in the design of photoacid generators for ArF lithography
a a a a |
Author keywords
Acid generating efficiency; C parameter; Deep UV and 193 nm chemically amplified resists; P parameter; Photoacid generator; Quantum yield
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Indexed keywords
ACID;
ARGON;
FLUORIDE;
LACTONE METHACRYLATE;
METHACRYLIC ACID DERIVATIVE;
METHYL 2 ADAMANTYLMETHACRYLATE;
PHENOL DERIVATIVE;
PHENYL GROUP;
SULFONIUM DERIVATIVE;
TRIPHENYLSULFONIUM ION;
UNCLASSIFIED DRUG;
ABSORPTION SPECTROPHOTOMETRY;
ARTICLE;
CHROMATOPHORE;
DEVICE;
FILM;
LIGHT ABSORPTION;
LITHOGRAPHY;
QUANTUM YIELD;
SCANNING ELECTRON MICROSCOPY;
SURFACE PROPERTY;
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EID: 0036368793
PISSN: 09149244
EISSN: None
Source Type: Journal
DOI: 10.2494/photopolymer.15.453 Document Type: Article |
Times cited : (9)
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References (29)
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