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Volumn 10, Issue 3, 1997, Pages 503-510

The influence of photoacid structure on the design and performance of 193-nm resists

Author keywords

193 nm photoresists; Photoacid generators; Protecting groups

Indexed keywords


EID: 0000644621     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.10.503     Document Type: Article
Times cited : (22)

References (13)
  • 1
    • 0010280332 scopus 로고    scopus 로고
    • Deep UV Resist Technology
    • Chapter 4 Ed. P. Rai-Choudhury, SPIE Optical Engineering Press, Bellingham, WA
    • R. D. Allen, W. E. Conley, R. R. Kunz, "Deep UV Resist Technology", Chapter 4 in Handbook of Microlithography, Ed. P. Rai-Choudhury, SPIE Optical Engineering Press, Bellingham, WA, 1997.
    • (1997) Handbook of Microlithography
    • Allen, R.D.1    Conley, W.E.2    Kunz, R.R.3
  • 3
    • 0003349299 scopus 로고
    • Methacrylate Terpolymer Approach in the Design of a Family of Chemically Amplified Positive Resists
    • Chapter 11 Polymers for Microelectronics, L. Thompson, C. G. Willson, and S. Tagawa
    • R. D. Allen, G. M. Wallraff, W. D. Hinsberg and R. R. Kunz, "Methacrylate Terpolymer Approach in the Design of a Family of Chemically Amplified Positive Resists", Chapter 11 in ACS Symposium Series, No. 537, Polymers for Microelectronics, L. Thompson, C. G. Willson, and S. Tagawa (1994).
    • (1994) ACS Symposium Series , vol.537
    • Allen, R.D.1    Wallraff, G.M.2    Hinsberg, W.D.3    Kunz, R.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.