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Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography
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Airborne contamination of a chemically amplified resist. 1. Identification of problems
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193 nm single-layer photoresists based on alternating copolymers of cycloolefins: The use of photogenerators of sulfamic acids
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(a) Houlihan, F. M.; Kometani, J. M.; Timko, A. G.; Hutton, R. S.; Cirelli, R. A.; Reichmanis, E.; Nalamasu, O.; Gabor, A. H.; Medina, A. N.; Biafore, J. J.; Slater, S. G. 193 nm Single-Layer Photoresists Based on Alternating Copolymers of Cycloolefins: The Use of Photogenerators of Sulfamic Acids. Proc. SPIE 1998, 3333, 73.
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