High-K dielectric materials for DRAM capacitors: Continued scaling of DRAMs may require the use of new materials with high dielectric constants

Semiconductor International

Volumn 19, Issue 12, 1996, Pages 109-116

  Kotecki, David E ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

DRAM capacitors; Ferroelectrics; High K dielectrics

Indexed keywords

EID: 0005020443     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (36)

1. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, (1994).
2. C.W. Teng, Proc. 1995 Inter. Symp. on VLSI Technol., Systems, and Applic., 295 (1995).
3. See U.S. Patents: 5,236,860, 5,262,662, 5,281,549, 5,240,871 and references therein.
4. H. Watanabe, T. Tatsumi, T. Ikarashi, A. Sakai, N. Aoto, T. Kikkawa, IEEE Trans. Electron Devices, 42 295, (1995).
5. G. Bronner, H. Aochi, M. Gall, J. Gambino, S. Gernhardt, E. Hammerl, H. Ho, J. Iba, H. Ishiuchi, M. Jaso, R. Kleinhenz, T. Mu, M. Narita, L. Nesbit, W. Neumueller, A. Nitayama, T. Ohiwa, S. Parke, J. Ryan, T. Sato, H. Takato, and S. Yoshikawa, Proc. of 1995 Symp. on VLSI Technol., 15 (1995).
6. Y. Ohji, Y. Matsui, T. Itoga, M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano, S. Iijima, and Y. Kawamoto, IEDM, 111 (1995).
7. S.C. Sun and T.F. Chen, IEDM, 12.4 (1994);
8. K.W. Kwon, I.S. Park, D.H. Han, E.S. Kim, S.T. Ahn, and M.Y. Lee, IEDM, 34.2 (1994).
9. P.-Y. Lesaicherre, H. Yamaguchi, Y. Miyasaka, H. Watanabe, H. Ono, and M. Yoshida, Integr. Ferroelec., 8, 201 (1995);
10. C.S. Hwang, S.O. Park, C.S. Kang, H.-J. Cho, H.-K. Kang, S.T. Anh, and M.Y. Lee, Jpn. J. Appl. Phys., 34, 5178 (1995).
11. P.-Y. Lesaicherre, S. Yamamichi, K. Takemura, H. Yamaguchi, K. Tokashiki, Y. Miyasaka, M. Yoshida, and H. Ono, Integr. Ferroelec., to be published (1996);
12. P.-Y. Lesaicherre, S. Yamamichi, H. Yamaguchi, K. Takemura, H. Watanabe, K. Tokashiki, K. Satoh, T. Sakuma, M. Yoshida, S. Ohnishi, K. Nakajima, K. Shibahara, Y. Miyasaka, H. Ono, IEDM, 34.1 (1994).
13. S.K. Dey, J.J. Lee, and P. Alluri, Jpn. J. Appl. Phys., 34, 3142 (1995).
14. S.S. Lee and H.G. Kim, J. Electronic Materials, 24, 1023 (1995).
15. C.-J. Peng and S.B. Krupanidhi, J. Mater. Res., 10, 708 (1995).
16. Q.X. Jia, X.D. Wu, S.R. Foltyn, and P. Tiwari, Appl. Phys. Lett., 66, 2197 (1995).
17. J. Kim, S.I. Kwun, and J.G. Yoon, Proc. 9th IEEE Int. Symp. on Appl. of Ferroelec., 423 (1995).
18. S. Yamamichi, K. Takemura, T. Sakuma, H. Watanabe, H. Ono, K. Tokashiki, E. Ikawa, and Y. Miyasaka, Proc. of 9th IEEE Inter. Symp. of Appl. of Ferroelec. 74 (1995).
19. T. Kawahara, M. Yamamuka, A. Yuuki, and K. Ono, Jpn. J. Appl. Phys, 34, 5077 (1995).
20. T. Kuroiwa, Y. Tsunemine, T. Horikawa, T. Makita, J. Tanimura, N. Mikami, and K. Sato, Jpn. J. Appl. Phys., 33, 5187 (1994).
21. C.S. Hwang, S.O. Park, H.-J. Cho, C.S. Kang, H.-K. Kang, S.I. Lee, and M.Y. Lee, Appl. Phys. Lett., 67, 2819 (1995).
22. R. Khamankar, J. Kim, B. Jiang, C. Sudhama, P. Miniar, R. Moazzami, R. Jones, and J. Lee, IEDM, 12.5 (1994).
23. Y. Nishioka, K. Shiozawa, T. Ohishi, K. Kanamoto, Y. Tokuda, H. Sumitani, S. Aya, H. Yabe, K. Itoga, T. Hifumi, K. Marumoto, T. Kuroiwa, T. Kawahara, K. Nishikawa, T. Oomori, T. Fujino, S. Yamamoto, S. Uzawa, M. Kimata, M. Nunoshita, and H. Abe, IEDM, 36.1 (1995).
24. S.R. Summerfelt, D.E. Kotecki, A.I. Kingon, H.N. Al Shareef, Proc. Mater. Res. Soc., 257 (1995).
25. G.W. Dietz, W. Antpohler, M. Klee, and R. Waser, J. Appl. Phys., 78, 6113 (1995).
26. K. Takemura, S. Yamamichi, P.-Y. Lesaicherre, K. Tokashiki, H. Miyamoto, H. Ono, Y. Miyasaka, and M. Yoshida, Jpn. J. Appl. Phys., 34, 5224 (1995).
27. H.N. Al Shareef, K.R. Bellur, A.I. Kingon, O. Auciello, Appl. Phys Lett., 66, 239 (1995).
28. A. Grill, A. and M.J. Brady, Integr. Ferroelectr. 9, 299 (1995).
29. C.E. Farrell, K.R. Milkove, C. Wang, and D.E. Kotecki, Integr Ferroelectr., (to be published (1996).
30. S.K. Streiffer, C. Basceri, A.I. Kingon, S. Lipa, S. Bilodeau, R. Carl and P.C. Van Buskirk, Proc. Mater. Res. Soc., to be published (1996).
31. R.B. Laibowitz, T.M. Shaw, D.E. Kotecki, S. Tiwari, A. Gupta, A. Grill, P.R. Duncombe, D.B. Beach, and S. Bilodeau, APS March Meeting, Abs. R28.05, (1996).
32. H.M. Grimes, Texas Instrum. Tech. J., 12, 5 (1995);
33. W. Fosnight, R. Martin, A.C. Bonora, Solid State Technol., 39, 77 (1996).
34. S.M. Bilodeau, J. Roeder, P. Van-Buskirk, and P. Kirlin, Proceedings of the CVD Technologies for Inter-Level Dielectrics and Interconnects Symposium at SEMICON/West (1995).
35. A. Coffer, Proc. Tegal 21st Annual Plasma Symposium, 13 (1995);
36. R. Vail, Proc. Tegal 21st Annual Plasma Symposium, 85 (1995).