Use of x-ray reflectivity techniques to determine structural parameters of some suicide structures for microelectronics applications

Applied Physics Letters

Volumn 76, Issue 1, 2000, Pages 52-54

  Santucci, S ^a   La Cecilia, A V ^a   Phani, A R ^a   Alfonsetti, R ^b   Moccia, G ^b   De Biase, M ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b Micron Technology Italia   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001798879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125653     Document Type: Article

References (8)

1. M. Tolan and W. Press, Z. Kristallogr. 213, 319 (1998).
2. P. P. Apte, A. Paranjpe, and G. Pollock, IEEE Electron Device Lett. 17, 506 (1996).
3. S. Santucci, L. Lozzi, M. Passacantando, P. Picozzi, P. Petricola, G. Moccia, R. Alfonsetti, and R. Diamanti, J. Vac. Sci. Technol. A 16, 1207 (1998).
4. S. Santucci, A. R. Phani, M. Missori, A. Terracciano, R. Alfonsetti, G. Moccia, and M. De Baise, J. Appl. Phys. 86, 4304 (1999).
5. L. G. Parrat, Phys. Rev. 95, 359 (1954).
6. P. S. Pershan, A. Braslau, A. H. Weiss, and J. Als-Nielsen, Phys. Rev. A 35, 4800 (1987).
7. S. K. Sinha, E. B. Sirota, and S. Garoff. Phys. Rev. B 38, 2297 (1988).
8. D. L. Windt, Comput. Phys. 12, 360 (1998).