Preliminary investigation of hafnium oxide deposited via atomic layer chemical vapor deposition (ALCVD)

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2001, Pages 11-15

  Conley Jr , J F ^a   Ono, Y ^a   Tweet, D J ^a   Zhuang, W ^a   Khaiser, M ^a   Solanki, R ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); OXYGEN; PERMITTIVITY; SEMICONDUCTING SILICON; SURFACES; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD);

THIN FILMS;

EID: 0035566437     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)