Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 343-346

  Vorob'ev, A N ^a   Karpov, S Yu ^b   Zhmakin, A I ^c   Lovtsus, A A ^d   Makarov, Yu N ^e   Krishnan, A ^f  

^a ITMO UNIVERSITY   (Russian Federation)

^b SOFT IMPACT LTD   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^e UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^f CFD RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FLOW OF FLUIDS; MATHEMATICAL MODELS; NUCLEATION; ROTATING DISKS; SILANES; SILICON CARBIDE; TEMPERATURE;

GAS PHASE NUCLEATION; ROTATING DISC REACTOR; THERMOPHORETIC FORCE;

EPITAXIAL GROWTH;

EID: 0033877665     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00776-9     Document Type: Article

References (6)

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3. Hill Ph.G. J. Fluid Mech. 25(3):1965;593.
4. Becker R., Döring W. Ann. Phys. 24:1935;s.719.
5. Walker K.L., Geyling F.T., Nagel S.R. J. Am. Ceram. Soc. 63:1980;552.
6. Detailed information on CFD ACE code is available through Internet (http://www.cfdrc.com).