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Volumn 368, Issue 2, 2000, Pages 176-180

Rates of reactions of H atoms with some CVD precursors

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FREE RADICALS; HYDROGEN; PHOTOLYSIS; RATE CONSTANTS; THERMAL EFFECTS;

EID: 0033722863     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00760-4     Document Type: Article
Times cited : (6)

References (33)
  • 1
    • 0001299830 scopus 로고
    • Gas-phase chemistry in the processing of materials for the semiconductor industry
    • Ryan K.R., Plumb I.C. Gas-phase chemistry in the processing of materials for the semiconductor industry. CRC Crit. Rev. Solid State Mater. Sci. 15:1988;153.
    • (1988) CRC Crit. Rev. Solid State Mater. Sci. , vol.15 , pp. 153
    • Ryan, K.R.1    Plumb, I.C.2
  • 27
    • 0003820285 scopus 로고    scopus 로고
    • J.A.M. Simoes, A. Greenberg, & J.F. Liebman. London: Chapman and Hall. Chapter 2
    • Tsang W. Simoes J.A.M., Greenberg A., Liebman J.F. Energetics of Organic Free Radicals. 1996;Chapman and Hall, London. Chapter 2.
    • (1996) Energetics of Organic Free Radicals
    • Tsang, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.